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Self‐Assembled Visible‐Bandgap II–VI Quantum Dots
Author(s) -
Rabe M.,
Lowisch M.,
Kreller F.,
Henneberger F.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199708)202:2<817::aid-pssb817>3.0.co;2-c
Subject(s) - quantum dot , exciton , molecular beam epitaxy , monolayer , homogeneous , recombination , phonon , relaxation (psychology) , condensed matter physics , band gap , materials science , photoluminescence , molecular physics , optoelectronics , epitaxy , chemistry , physics , nanotechnology , psychology , social psychology , biochemistry , layer (electronics) , gene , thermodynamics
This paper reports on the in‐situ growth of II–VI quantum dots by molecular beam epitaxy. The dots are formed in highly strained (Zn, Cd)Se films of only a few monolayer thickness grown on ZnSe. The formation sets on when the Cd mole fraction exceeds 30%. The homogeneous width of the quantum dot excitons is on the μ eV‐scale. We present data on the recombination and relaxation of carriers and excitons, their interaction with phonons as well as on stimulated emission in these zero‐dimensional structures.