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Excitonic Effects in Cd 1— x Mn x Se Quantum Dots and Cd 1— x Mn x Te/ZnTe Quantum Wells
Author(s) -
Oka Y.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199708)202:2<795::aid-pssb795>3.0.co;2-t
Subject(s) - dephasing , exciton , condensed matter physics , quantum tunnelling , quantum dot , polaron , quantum well , biexciton , magnetic semiconductor , photoluminescence , relaxation (psychology) , semiconductor , chemistry , materials science , physics , optoelectronics , electron , ferromagnetism , optics , quantum mechanics , psychology , social psychology , laser
Excitonic properties and dynamics are studied in nanostructure diluted magnetic semiconductors by transient luminescence and nonlinear optical spectroscopies. Quantum dots (QDs) of Cd 1— x Mn x Se show enhanced excitonic magnetic polaron effects with an increased binding energy of 20 meV. Quantum wells (QWs) of the Cd 1— x Mn x Te/ZnTe ( x = 0 to 0.2) system display fast dephasing relaxation of the QW exciton with the dephasing time T 2 of 360 to 450 fs, which indicates the fast dephasing process of free excitons in the strained QWs. In the asymmetric double QWs, the tunneling time of carriers through the intermediate barrier is determined as 0.01 to 10 6 ps for barrier thicknesses of 40 to 320 Å. An enhanced excitonic magnetic polaron binding energy, the rapid dephasing of free excitons and tunneling of carriers are the characteristic properties of the QW excitons in the diluted magnetic semiconductor nanostructures.