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Cyclotron Resonance and Hot Electron Effects in II–VI Semiconductors
Author(s) -
Meyer B. K.,
Hofmann D. M.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199708)202:2<783::aid-pssb783>3.0.co;2-4
Subject(s) - cyclotron resonance , microwave , electron , electron cyclotron resonance , cyclotron , fourier transform ion cyclotron resonance , semiconductor , atomic physics , effective mass (spring–mass system) , penetration depth , scattering , condensed matter physics , ion cyclotron resonance , quantum well , resonance (particle physics) , far infrared , chemistry , physics , mass spectrometry , optics , optoelectronics , laser , chromatography , quantum mechanics
Cyclotron resonance using microwave and far infrared radiation is used to study nonparabolicity of electron effective masses and spin splitting effects in high mobility CdTe, ZnTe and ZnSe. Mobilities close to 1×10 6 cm 2 /Vs are found but only for high magnetic fields when scattering events on the orbits given by the magnetic length are relevant. Nonparabolicity effects are not evident for ZnSe/ZnSSe quantum wells, mass enhancement arises from a penetration of the electron wave function into the barrier. The potential of optically detected cyclotron resonance at microwave frequencies allows to give insight in hot electron effects in ZnTe.