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Reflectance Difference Spectra of Semiconductor Surfaces and Interfaces
Author(s) -
Nakayama T.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199708)202:2<741::aid-pssb741>3.0.co;2-s
Subject(s) - spectral line , semiconductor , reflectivity , condensed matter physics , vacancy defect , materials science , symmetry (geometry) , surface states , resonance (particle physics) , surface (topology) , molecular physics , atomic physics , chemistry , optics , physics , optoelectronics , geometry , mathematics , astronomy
Reflectance difference (RD) spectra are calculated for various semiconductor surfaces and interfaces to clarify the spectra origin. It is shown that RD spectra originate from surface‐state‐related resonance transitions and inner bulk‐like transitions for GaAs (001) surfaces and the contribution degrees of both transitions to total spectra depend on the localization nature of electronic states. For GaAs/ZnSe heterovalent interfaces, the RD spectra originate from GaAs bulk‐state transitions, which are symmetry broken by the presence of the interface, and the vacancy‐related transitions in GaSe interface layers. These results are compared with experimental observations.