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Multi‐Band Bloch Equations and Gain Spectra of Highly Excited II–VI Semiconductor Quantum Wells
Author(s) -
Girndt A.,
Jahnke F.,
Knorr A.,
Koch S. W.,
Chow W. W.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199708)202:2<725::aid-pssb725>3.0.co;2-k
Subject(s) - dephasing , quantum well , excited state , condensed matter physics , renormalization , semiconductor , coulomb , physics , bloch equations , scattering , band gap , electronic band structure , chemistry , quantum mechanics , laser , electron
Quasi‐equilibrium excitation dependent optical probe spectra of II–VI semiconductor quantum wells at room temperature are investigated within the framework of multi‐band semiconductor Bloch equations. The calculations include correlation effects beyond the Hartree‐Fock level which describe dephasing, interband Coulomb correlations and band‐gap renormalization in second Born approximation. In addition to the carrier–Coulomb interaction, the influence of carrier–phonon scattering and inhomogeneous broadening is considered. The explicit calculation of single particle properties like band structure and dipole matrix elements using k · p theory makes it possible to investigate various II–VI material combinations. Numerical results are presented for CdZnSe/ZnSe and CdZnSe/MgZnSSe semiconductor quantum‐well systems.