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Fabrication of p‐Type Zn(S)Se Layers and pn Junction Laser Structures by MOVPE
Author(s) -
Fujita Sz.,
Ogata K.,
Kawaguchi D.,
Nishiyama N.,
Peng Z. G.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199708)202:2<707::aid-pssb707>3.0.co;2-k
Subject(s) - metalorganic vapour phase epitaxy , annealing (glass) , materials science , epitaxy , laser , fabrication , optoelectronics , doping , p–n junction , analytical chemistry (journal) , chemistry , semiconductor , nanotechnology , optics , metallurgy , pathology , chromatography , medicine , physics , alternative medicine , layer (electronics)
Growth of p‐type ZnSe by metalorganic vapor‐phase epitaxy (MOVPE) is demonstrated by nitrogen doping with photoassisted growth technique at 350 °C followed by thermal annealing. However, more activation of acceptors by the thermal annealing at higher temperatures, e.g., 500 °C, is responsible for defect generation. At the present stage, annealing at 400 to 450 °C is the optimum condition to suppress the defect generation while activating the acceptors. In order to fabricate a laser structure, n‐type and active layers should also be stable against the annealing damage. Therefore, the growth of these layers was carried out at 400 or 450 °C, which is higher than the standard temperature. The pn junction ZnCdSe/ZnSe/ZnSSe SCH laser structure fabricated by the present technique showed stimulated emission under pulse injection at 77 K.