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On the Band Gap Variation in SiC Polytypes
Author(s) -
van Haeringen W.,
Bobbert P. A.,
Backes W. H.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199707)202:1<63::aid-pssb63>3.0.co;2-e
Subject(s) - variation (astronomy) , materials science , physics , astrophysics
Electronic band gaps of SiC polytypes are reproduced within an interface matching technique of electronic wave functions. Essential features resulting from this treatment are introduced in a one‐dimensional model, leading to a transparent description of the electronic band gap variation among polytypes. It is discussed in what sense the polytypes of SiC are exceptional in showing a relatively strong band gap variation, contrary to e.g. polytypes of ZnS and hypothetical polytypes made up from Si, C or AlAs.