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Surface Studies on SiC as Related to Contacts
Author(s) -
Bozack M. J.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199707)202:1<549::aid-pssb549>3.0.co;2-6
Subject(s) - ohmic contact , work function , materials science , silicon carbide , x ray photoelectron spectroscopy , sputtering , etching (microfabrication) , semiconductor , optoelectronics , nanotechnology , surface (topology) , contact angle , engineering physics , thin film , layer (electronics) , composite material , chemical engineering , engineering , geometry , mathematics
We review the current status of surface studies on SiC as related to development of metal–semiconductor contacts, focusing on ten selected aspects of work through 1996. The ten areas include high resolution microscopy, XPS core‐level binding energies versus temperature, surface graphitization, plasmon‐loss features, work function and electron affinity, sputtering, etching, surface preparation and cleaning, surface states, and the index of interface behavior for SiC. Special consideration is given to the Ni/SiC ohmic contact system, and we discuss possible future directions in SiC contact surface research.