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Homoepitaxial SiC Growth by Molecular Beam Epitaxy
Author(s) -
Kern R. S.,
Järrendahl K.,
Tanaka S.,
Davis R. F.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199707)202:1<379::aid-pssb379>3.0.co;2-2
Subject(s) - vicinal , materials science , epitaxy , substrate (aquarium) , molecular beam epitaxy , doping , thin film , analytical chemistry (journal) , crystallography , optoelectronics , nanotechnology , chemistry , layer (electronics) , oceanography , organic chemistry , chromatography , geology
The homoepitaxial growth of SiC thin films by solid‐ and gas‐source molecular beam epitaxy is reviewed and discussed. Our recent results regarding the homoepitaxial growth of single crystal 3C‐SiC(111) and 6H‐SiC(0001) thin films are also presented. The 3C‐SiC(111) films were grown on both vicinal and on‐axis 6H‐SiC(0001) substrates at temperatures between 1000 and 1500 °C using SiH 4 and C 2 H 4 . They contained double positioning boundaries and stacking faults and the surface morphology and growth rate depended strongly on temperature. Films of 6H‐SiC(0001) with low defect densities were deposited at high growth rates on vicinal 6H‐SiC(0001) substrates by adding H 2 to the reactant mixture at temperatures between 1350 and 1500 °C. At temperatures below 1350 °C, only the cubic phase was formed. A kinetic analysis of the SiC deposition process is also presented. The SiC films were resistive with an n‐type character and a lower N concentration than the p‐type CVD‐grown epilayers of the substrate. Undoped 6H‐SiC films with the lowest atomic nitrogen and electron concentration had a mobility of 434 cm 2 V —1 s —1 , the highest room temperature value ever reported for this polytype. Both the 6H‐SiC(0001) and the 3C‐SiC(111) epilayers were controllably doped using a NH 3 /H 2 mixture (for lighly n‐doped films), pure N 2 (for heavily n‐doped SiC epilayers) and Al evaporated from a standard effusion cell (for p‐type doping).