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Heterointerface Control and Epitaxial Growth of 3C‐SiC on Si by Gas Source Molecular Beam Epitaxy
Author(s) -
Fuyuki T.,
Hatayama T.,
Matsunami H.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199707)202:1<359::aid-pssb359>3.0.co;2-a
Subject(s) - molecular beam epitaxy , epitaxy , materials science , reflection high energy electron diffraction , crystallinity , electron diffraction , carbonization , crystal growth , optoelectronics , crystal (programming language) , layer (electronics) , diffraction , nanotechnology , crystallography , chemistry , optics , scanning electron microscope , composite material , programming language , physics , computer science
Heterointerface modification and epitaxial growth of 3C‐SiC on Si by gas source molecular beam epitaxy (MBE) are surveyed. A Si surface was carbonized by the use of C 2 H 2 , thermal cracking of C 3 H 8 , and dimethylgermane (CH 3 ) 2 GeH 2 (DMGe) to chemically convert the surface region into single crystalline 3C‐SiC prior to crystal growth. It was found that a Si surface can be carbonized reproducibly by the use of hydrocarbon radicals at a temperature as low as 750 °C. The initial stage of carbonization is discussed based on the time‐resolved reflection high‐energy electron diffraction analysis. Low‐temperature heterointerface modification by DMGe is described. As an advanced epitaxial growth, atomic‐level control in SiC crystal growth by gas source MBE is given. Crystallinity and surface morphology of low‐temperature 3C‐SiC homoepitaxy on a carbonized layer is presented.