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Homoepitaxial VPE Growth of SiC Active Layers
Author(s) -
Burk A. A.,
Rowland L. B.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199707)202:1<263::aid-pssb263>3.0.co;2-y
Subject(s) - epitaxy , materials science , vapor phase , doping , optoelectronics , semiconductor , process (computing) , engineering physics , nanotechnology , layer (electronics) , computer science , engineering , physics , thermodynamics , operating system
SiC active layers of tailored thickness and doping form the heart of all SiC electronic devices. These layers are most conveniently formed by vapor phase epitaxy (VPE). Exacting requirements are placed upon the SiC‐VPE layers' material properties by both semiconductor device physics and available methods of device processing. In this paper, the current ability of the SiC‐VPE process to meet these requirements is described along with continuing improvements in SiC epitaxial reactors, processes and materials.