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Electric Field Effects on Charged Excitons in Semiconductors
Author(s) -
Feddi E.,
Dujardin F.,
Diouri J.,
Elhassani A.,
Katih M.,
Stebe B.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199706)201:2<521::aid-pssb521>3.0.co;2-a
Subject(s) - physics , electric field , exciton , semiconductor materials , effective mass (spring–mass system) , semiconductor , stark effect , atomic physics , condensed matter physics , quantum mechanics
Effects of a uniform electric field on excitonic complexes X — and X + 2 in semiconductors are studied by using a pure variational method. Wannier‐Stark levels of the centre of mass motion are then obtained and ground state energies for both complexes X — and X + 2 are computed by using a (3 × 34) term trial wave function. Our results show that the electric field enhances the binding energy for both types of complexes and for a wide range of field strength. Energies of electrooptical transitions involving these bound excitonic levels are then deduced for different values of the field and the carrier effective mass ratio.