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Investigation of a New Photoluminescence Band at 1.727 eV in Si‐Doped Ga 0.71 Al 0.29 As
Author(s) -
Khirouni K.,
Rzigua F.,
Alaya S.,
Selmi A.,
Sallese J. P.,
Gibart P.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199706)201:2<515::aid-pssb515>3.0.co;2-z
Subject(s) - photoluminescence , physics , doping , materials science , optics , optoelectronics
A detailed photoluminescence analysis of a deep broad band emission around 1.727 eV has been performed in Si‐doped Ga 0.71 Al 0.29 As samples grown by MBE technique. The emission spectrum has a phonon structure even at high temperature. The observed band shape and its temperature dependence show an anomalous behavior. These results can be explained if we assume either two distinct donor configurations or a bistable character of the involved deep donor. A configuration coordinate diagram showing the recombination processes of the low and higher temperature emissions is presented. A tentative connection between the deep donor emission bands and the DX center is discussed.