Premium
Electronic Pairing Mechanism Due to Band Modification in a Two‐Band Model: T c Evaluation
Author(s) -
Mizia J.,
Górski G.,
Traa M. R. M. J.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199706)201:2<457::aid-pssb457>3.0.co;2-f
Subject(s) - pairing , superconductivity , condensed matter physics , electronic band structure , electronic structure , electron , coupling (piping) , physics , superconducting transition temperature , materials science , quantum mechanics , metallurgy
Following the electronic model developed by us previously (Mizia and Romanowski, Mizia) we estimate the superconducting transition temperature in a simple electronic two‐band model for materials characterized by a broad superconducting band and a narrow level within the same energy range. A large electron deformation coupling constant and large electron correlation effects are assumed. It is shown that high‐temperature superconductivity is entirely possible within a range of reasonable electronic parameters. This model does not assume any artificial interactions to obtain a negative pairing potential. Instead, the negative part of the electronic interaction potential comes from the modification of the electron dispersion relation with growing number of superconducting pairs. Such a modification is possible in soft electronic systems, i.e. in systems partial to band modification due to large internal stresses, strong electronic correlation effects and broad band narrow level charge transfer during the superconducting transition.