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Photoluminescence in a‐C:H
Author(s) -
Cernogora J.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199705)201:1<303::aid-pssb303>3.0.co;2-k
Subject(s) - photoluminescence , amorphous semiconductors , doping , materials science , semiconductor , amorphous solid , amorphous silicon , silicon , optoelectronics , crystallography , chemistry , crystalline silicon
From a discussion of new results about photoluminescence (PL) in a‐C:H as well as other results taken from the literature, we point out some characteristics of photoluminescence in amorphous carbon as compared to amorphous silicon. We suggest that the PL mechanism in a‐C:H is not as close to that in a‐Si:H, as claimed by several authors. More on that subject can be learnt from the comparison with PL in other disordered systems such as heavily doped semiconductors, alloy semiconductors and polymers.