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High Temperature Hot Electron Transport in 6H‐ and 3C‐SiC
Author(s) -
Weng X. M.,
Cui H. L.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199705)201:1<161::aid-pssb161>3.0.co;2-c
Subject(s) - drift velocity , electric field , electron , saturation velocity , physics , field (mathematics) , electron temperature , monte carlo method , condensed matter physics , computational physics , atomic physics , materials science , nuclear physics , quantum mechanics , statistics , mathematics , pure mathematics
The electron drift velocity and electron temperature in 6H‐ and 3C‐SiC at 300, 673 and 1073 K ambient temperature have been calculated by using a hydrodynamic balance equation method. Our results show that the drift velocity versus electric field relation in 3C‐SiC at 300 K is in good agreement with a previous Monte Carlo simulation. A gentle peak of drift velocity appears at high electric field. The velocity–field relation in 6H‐SiC at 300 K agrees with the experimental data up to 500 kV/cm. At higher electric field, however, the drift velocity decreases.