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Empirical Pseudo‐Potential Calculations in GaAs 1—x N x and AlAs 1—x N x Ordered Alloys
Author(s) -
Aourag H.,
Bouhafs B.,
Certier M.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199705)201:1<117::aid-pssb117>3.0.co;2-8
Subject(s) - materials science , bowing , semiconductor , excitation , charge (physics) , transverse plane , condensed matter physics , refractive index , optoelectronics , physics , philosophy , theology , structural engineering , quantum mechanics , engineering
We have performed an empirical pseudo‐potential study of the fundamental excitation in ordered alloys of III–V semiconductors GaAs 1— x N x and AlAs 1— x N x . Various quantities including the bowing parameters of the fundamental gaps, the energy levels, the charge densities, the ionicity character, the refractive index and the transverse effective charge are calculated.