Premium
Si(111)/B Surface Reconstruction and Related Phenomena
Author(s) -
Chang Jianlin,
Stott M. J.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199704)200:2<481::aid-pssb481>3.0.co;2-u
Subject(s) - pseudopotential , impurity , surface reconstruction , adsorption , epitaxy , materials science , surface (topology) , ab initio , layer (electronics) , ab initio quantum chemistry methods , doping , core (optical fiber) , crystallography , molecular physics , chemical physics , condensed matter physics , chemistry , nanotechnology , physics , geometry , molecule , optoelectronics , mathematics , organic chemistry , composite material
The results of ab initio pseudopotential calculations of various aspects of Si(111) surface with adsorbed B and other group III impurities are reported. The reconstruction of the surface due to adsorbed group III impurities is studied along with the surface core level shifts of the Si(111)/B system. Si epitaxial growth on Si(111)/B surface and the possible formation of a δ‐doped layer are also examined.