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Basic Model Relations for Temperature Dependencies of Fundamental Energy Gaps in Semiconductors
Author(s) -
Pässler R.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199703)200:1<155::aid-pssb155>3.0.co;2-3
Subject(s) - semiconductor , band gap , statistical physics , mechanism (biology) , principal (computer security) , semiconductor materials , energy (signal processing) , theoretical physics , physics , computer science , condensed matter physics , quantum mechanics , operating system
Novel analytical models describing the temperature dependencies of fundamental energy gaps in semiconductors are shown to be consistent with basic equations due to the electron–phonon interaction mechanism. The principal deficiencies of three‐parameter models and the inevitability of using more elaborate four‐parameter representations are illustrated by alternative fittings of high‐precision E g ( T )‐data given for GaAs by Grilli et al. Peculiarities of parameter constellations revealed by measured E g ( T )‐dependencies in wide‐gap versus medium‐gap materials are briefly discussed.