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Effects of a Deep‐Level Impurity on Optical Transitions of Quantum‐Well Heterostructures
Author(s) -
Zhao Peiji,
Cui H. L.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199702)199:2<579::aid-pssb579>3.0.co;2-2
Subject(s) - quantum well , impurity , oscillator strength , exciton , condensed matter physics , heterojunction , dopant , photoluminescence , quantum dot , ionized impurity scattering , semiconductor , luminescence , materials science , doping , optoelectronics , physics , quantum mechanics , laser , spectral line
We investigate the effects of a deep impurity center, modeled by a δ‐function potential, on the optical transitions of semiconductor quantum wells. Both the exciton binding energy and the oscillator strength are calculated as functions of the strength and the center location of the potential, in an attempt to understand the photoluminescence of transition‐metal‐impurity‐doped semiconductor quantum confined structures. The calculation shows that a positive impurity placed near the wall of a quantum well can increase the luminescence of the quantum well; a negative impurity can greatly raise the luminescence of quantum wells if it is placed in a suitable spatial range, but it is difficult to use as a dopant from the point of view of device fabrication.