Premium
Thermoelectric Power and Scattering of Carriers in Bi 2—x Sn x Te 3 with Layered Structure
Author(s) -
Kulbachinskii V. A.,
Negishi H.,
Sasaki M.,
Giman Y.,
Inoue M.,
Losták P.,
Horák J.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199702)199:2<505::aid-pssb505>3.0.co;2-9
Subject(s) - materials science , scattering , seebeck coefficient , thermoelectric effect , engineering physics , optics , composite material , physics , thermodynamics , thermal conductivity
Thermoelectric power, electrical resistivity, and Hall effect of p‐type Bi 2— x Sn x Te 3 (0 ≤ x ≤ 0.030) single crystals have been measured in the temperature range 4.2 to 300 K. By doping Sn atoms into the host Bi 2 Te 3 lattice, enhancements in the thermopower and resistivity are observed in the intermediate temperature range 30 to 150 K, and activation type behaviors are found in the resistivity versus temperature curves with an activation energy of the order of 10 meV which corresponds to the Sn‐induced impurity band located above the second lower valence band. For our experimental results, we have also given a qualitative discussion about the scattering mechanism.