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On Quadruple‐Defect Formation in C15 Laves Phases
Author(s) -
Modder I. W.,
Bakker H.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199702)199:2<369::aid-pssb369>3.0.co;2-e
Subject(s) - atom (system on chip) , ising model , materials science , condensed matter physics , crystallography , thermodynamics , chemistry , physics , computer science , embedded system
Arguments are given in favour of quadruple‐defect formation in some Laves phases AB 2 with the C15 (MgCu 2 ) structure. Such a defect consists of three vacancies on the B sublattice combined with one anti‐structure B atom. Using the Ising model and applying the Bragg‐Williams approximation, equations are derived for quadruple‐defect content and vapour pressures as function of temperature. Possible experiments for measuring these quantities are suggested. On the basis of simplified equations some consequences are elucidated.