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Tunneling of Electrons through a Potential Barrier with Impurity Levels in Semiconductors in the Presence of an Electric Field
Author(s) -
Sugakov V. I.,
Yatskevich S. A.
Publication year - 1997
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(199701)199:1<119::aid-pssb119>3.0.co;2-7
Subject(s) - quantum tunnelling , transmission coefficient , electric field , rectangular potential barrier , condensed matter physics , electron , impurity , semiconductor , electric potential , voltage , materials science , transmission (telecommunications) , physics , electrical engineering , optoelectronics , quantum mechanics , engineering
The problem of electron tunneling in an electric field through a potential barrier doped with shallow traps has been solved. The transmission coefficient and current–voltage characteristics (CVC) of this system have been calculated for different sets of system parameters. It is shown that the current–voltage characteristics of the given system have a region with negative differential resistance, that depends on the depth of the impurity level.