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Enhanced Physical Properties in a Pentacene Polymorph
Author(s) -
Siegrist Theo,
Kloc Christian,
Schön Jan H.,
Batlogg Bertram,
Haddon Robert C.,
Berg Steffen,
Thomas Gordon A.
Publication year - 2001
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/1521-3773(20010504)40:9<1732::aid-anie17320>3.0.co;2-7
Subject(s) - pentacene , materials science , band gap , electron mobility , optoelectronics , organic semiconductor , chemical physics , chemistry , nanotechnology , thin film transistor , layer (electronics)
A low temperature mobility up to 10 000 cm 2 V −1 s −1 at 1.7 K was observed for a new polymorphic form of pentacene (C 22 H 14 , see picture). Optical measurements show a band gap of the order of 2 eV, and transport measurements revealed a mobility above 3 cm 2 V −1 s −1 at room temperature.