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Tuning the Semiconducting Properties of Sexithiophene by α , ω ‐Substitution— α , ω ‐Diperfluorohexylsexithiophene: The First n‐Type Sexithiophene for Thin‐Film Transistors
Author(s) -
Facchetti Antonio,
Deng Yvonne,
Wang Anchuan,
Koide Yoshihiro,
Sirringhaus Henning,
Marks Tobin J.,
Friend Richard H.
Publication year - 2000
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/1521-3773(20001215)39:24<4547::aid-anie4547>3.0.co;2-j
Subject(s) - thin film transistor , substitution (logic) , materials science , optoelectronics , transistor , type (biology) , thin film , nanotechnology , computer science , electrical engineering , engineering , layer (electronics) , geology , voltage , paleontology , programming language
The first substituent‐induced “flip” from p‐ to n‐type conductivity as well as enhanced thermal stability and volatility are found for fluorocarbon‐functionalized sexithiophene 1 (relative to the fluorine‐free analogues 2 and 3 ). Evaporated films of 1 behave as n‐type semiconductors, and can be used to fabricate thin‐film transistors with field‐effect mobilities as high as 0.02 cm 2 V −1 s −1 —some of the highest reported to date for n‐type organic semiconductors.