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Inorganic Semiconductor Nanowires: Rational Growth, Assembly, and Novel Properties
Author(s) -
Wu Yiying,
Yan Haoquan,
Huang Michael,
Messer Benjamin,
Song Jae Hee,
Yang Peidong
Publication year - 2002
Publication title -
chemistry – a european journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.687
H-Index - 242
eISSN - 1521-3765
pISSN - 0947-6539
DOI - 10.1002/1521-3765(20020315)8:6<1260::aid-chem1260>3.0.co;2-q
Subject(s) - nanowire , materials science , nanotechnology , semiconductor , nanoscopic scale , rational design , vapor–liquid–solid method , photonics , electronics , optoelectronics , chemistry
Rationally controlled growth of inorganic semiconductor nanowires is important for their applications in nanoscale electronics and photonics. In this article, we discuss the rational growth, physical properties, and integration of nanowires based on the results from the authors' laboratory. The composition, diameter, growth position, and orientation of the nanowires are controlled based on the vapor–solid–liquid (VLS) crystal growth mechanism. The thermal stability and optical properties of these semiconductor nanowires are investigated. Particularly, ZnO nanowires with well‐defined end surfaces can function as room‐temperature ultraviolet nanolasers. In addition, a novel microfluidic‐assisted nanowire integration (MANI) process was developed for the hierarchical assembly of nanowire building blocks into functional devices and systems.