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Interfacial electrostatic phenomena and capacitance–voltage characteristics of ultrathin polyimide Langmuir–Blodgett films
Author(s) -
Itoh Eiji,
Iwamoto Mitsumasa
Publication year - 2001
Publication title -
electrical engineering in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.136
H-Index - 28
eISSN - 1520-6416
pISSN - 0424-7760
DOI - 10.1002/1520-6416(200102)134:3<9::aid-eej2>3.0.co;2-d
Subject(s) - polyimide , langmuir–blodgett film , materials science , capacitance , electric field , metal , voltage , polarity (international relations) , condensed matter physics , electrode , monolayer , layer (electronics) , composite material , nanotechnology , electrical engineering , chemistry , physics , metallurgy , engineering , quantum mechanics , biochemistry , cell
Capacitance–voltage ( C – V ) characteristic of ultrathin polyimide (PI) Langmuir–Blodgett (LB) films is discussed theoretically and experimentally taking into account the interfacial electrostatic phenomena and interfacial electronic states at the metal/PI LB film interface. It was found that the apparent film thickness decreases due to the charge exchange phenomena at the metal/film interface. It was also found that electrical insulating properties of the Au/PI LB film/Al device depended on the polarity of external voltage, probably due to the formation of the electrostatic interfacial electric field of 10 8 to 10 9 V/m. © 2000 Scripta Technica, Electr Eng Jpn 134(3): 9–15, 2001