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Determination of the Density Distribution of Interface States from High‐ and Low‐Frequency Capacitance Characteristics of the Tin/Organic Pyronine‐B/ p ‐type Silicon Structure
Author(s) -
Çakar Muzaffer,
Temirci Cabir,
Türüt Abdulmecit
Publication year - 2002
Publication title -
chemphyschem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.016
H-Index - 140
eISSN - 1439-7641
pISSN - 1439-4235
DOI - 10.1002/1439-7641(20020816)3:8<701::aid-cphc701>3.0.co;2-r
Subject(s) - schottky diode , schottky barrier , semiconductor , silicon , tin , density of states , chemistry , capacitance , optoelectronics , materials science , organic semiconductor , valence (chemistry) , diode , analytical chemistry (journal) , condensed matter physics , chemical physics , physics , organic chemistry , electrode , chromatography
The interface state energy distribution curve of the Sn/pyronine‐B/ p ‐Si Schottky diode has been obtained from its forward‐bias C HF and C LF characteristics (see picture). The interface state density value rises exponentially with bias from the midgap towards the top of the valence band. The interface states and interfacial layer at the organic semiconductor/inorganic semiconductor structures play an important role in the determination of the Schottky barrier height.