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Opening a New Vista in Solid‐State Science: Tuning Electronic Properties by Gate‐Induced Doping
Author(s) -
Panthöfer Martin,
Jansen Martin
Publication year - 2002
Publication title -
chemphyschem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.016
H-Index - 140
eISSN - 1439-7641
pISSN - 1439-4235
DOI - 10.1002/1439-7641(20020617)3:6<507::aid-cphc507>3.0.co;2-e
Subject(s) - doping , superconductivity , field effect transistor , materials science , valence (chemistry) , transistor , solid state , optoelectronics , electronic structure , nanotechnology , chemical physics , condensed matter physics , chemistry , physics , voltage , organic chemistry , quantum mechanics
Superconductivity at temperatures as high as T C =117 K is found in single‐crystal field effect transistor devices based on C 60 co‐crystals (C 60 ⋅2CHX 3 , X=Cl, Br) on gate‐induced doping. The method, recent breakthroughs, and its fundamental character towards tuning the valence electron concentration of solids in general are highlighted in this article.