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Comparison of the open circuit voltage of simplified PERC cells passivated with PECVD silicon nitride and thermal silicon oxide
Author(s) -
Kerr Mark,
Schmidt Jan,
Cuevas Andres
Publication year - 2000
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/1099-159x(200009/10)8:5<529::aid-pip334>3.0.co;2-6
Subject(s) - passivation , silicon nitride , materials science , plasma enhanced chemical vapor deposition , open circuit voltage , optoelectronics , silicon , common emitter , thermal oxidation , nitride , carrier lifetime , oxide , voltage , nanotechnology , electrical engineering , layer (electronics) , engineering , metallurgy
Plasma enhanced chemical vapor deposited silicon nitride films have been used to passivate both the front and rear surface of simplified PERC silicon solar cells (planar surface, single‐step emitter). An independently confirmed open circuit voltage (V oc ) of 667 mV was measured, proving the outstanding surface passivation provided by the silicon nitride films. The achieved V oc represents a significant improvement for all‐SiN passivated silicon solar cells. A conversion efficiency of 17˙8% was obtained. For comparison, similar cells with different passivation schemes, including high quality, thermally grown TCA oxides and thin SiO 2 /SiN double layers, were also investigated. Open circuit voltages up to 673 mV and conversion efficiencies up to 18˙3% were achieved. Copyright © 2000 John Wiley & Sons, Ltd.