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Radiation hard multi‐quantum well InP/InAsP. Solar cells for space applications
Author(s) -
Walters R. J,
Summers G. P,
Messenger S. R,
Freundlich A,
Monier C,
Newman F
Publication year - 2000
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/1099-159x(200005/06)8:3<349::aid-pip326>3.0.co;2-z
Subject(s) - photocurrent , optoelectronics , photovoltaic system , quantum efficiency , radiation , solar cell , materials science , proton , irradiation , energy conversion efficiency , active layer , quantum dot solar cell , layer (electronics) , optics , nanotechnology , polymer solar cell , physics , electrical engineering , engineering , quantum mechanics , nuclear physics , thin film transistor
The effect of proton irradiation on the photovoltaic response of p‐i‐n InP solar cells that include an InP/InAsP multi‐quantum well (MQW) layer in the intrinsic region is studied. Data from cells with three different quantum well structures are presented along with data from a control cell grown without MQW layer. The results show how the addition of the MQW's improves the solar energy conversion efficiency thereby allowing the base to be as thin a 1 μsm while still maintaining a good photocurrent. In addition, the radiation response of the MQW cells is shown to be equal to or better than the InP control cell. Published in 2000 by John Wiley & Sons, Ltd.