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Effect of Stoichometry on the radiation response of In x Ga 1−x as solar cells
Author(s) -
Messenger S. R,
Walters R. J,
Summers G. P,
Hoffman R. H,
Stan M. A
Publication year - 2000
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/1099-159x(200005/06)8:3<345::aid-pip325>3.0.co;2-d
Subject(s) - solar cell , irradiation , radiation , optoelectronics , proton , materials science , band gap , x ray absorption spectroscopy , lattice (music) , radiation resistance , optics , physics , absorption spectroscopy , nuclear physics , acoustics
The response of In x Ga 1−x As solar cells of three different stoichimetries to proton irradiation is presented. In particular, the response of the In 0ṁ22 Ga 0ṁ78 As (band gap of 1ṁ1 eV) cell recently developed by Essential Research Inc., which has attained record high efficiencies, is studied. The response of the ERI cell is shown to be equivalent to that of a standard GaAs cell up to high irradiation levels. Overall, however, adding In to the GaAs lattice is found to generally reduce the cell radiation tolerance. Published in 2000 by John Wiley & Sons, Ltd.