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High growth rate metal‐organic molecular beam epitaxy for the fabrication of GaAs space solar cells
Author(s) -
Freundlich A,
Newman F,
Monier C,
Street S,
Dargan P,
Levy M
Publication year - 2000
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/1099-159x(200005/06)8:3<333::aid-pip324>3.0.co;2-n
Subject(s) - metalorganic vapour phase epitaxy , molecular beam epitaxy , epitaxy , chemical beam epitaxy , chemical vapor deposition , fabrication , optoelectronics , materials science , solar cell , photovoltaic system , nanotechnology , chemistry , electrical engineering , medicine , alternative medicine , engineering , layer (electronics) , pathology
In this work, the epitaxial growth of GaAs photovoltaic devices using metalorganic molecular beam epitaxy (MOMBE) and chemical beam epitaxy (CBE) with growth rates in excess of 3 μm/h is undertaken. The performance of these preliminary devices offer encouraging evidence for MOMBE and CBE as possible alternatives to the more common metalorganic chemical vapor deposition (MOCVD) for the production of III‐V solar cells. Copyright © 2000 John Wiley & Sons, Ltd.