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Molecular design and development of photoresists for ArF excimer laser lithography
Author(s) -
Hasegawa Etsuo,
Maeda Katsumi,
Iwasa Shigeyuki
Publication year - 2000
Publication title -
polymers for advanced technologies
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.61
H-Index - 90
eISSN - 1099-1581
pISSN - 1042-7147
DOI - 10.1002/1099-1581(200008/12)11:8/12<560::aid-pat6>3.0.co;2-o
Subject(s) - resist , lithography , excimer laser , photolithography , materials science , polymer , masking (illustration) , optoelectronics , numerical aperture , laser , optics , nanotechnology , physics , composite material , layer (electronics) , wavelength , art , visual arts
Positive‐tone and negative‐tone resists for ArF excimer laser lithography are developed from novel polymers, which are called functionally‐integrated polymers having polar alicyclic units. The fundamental unit of the polymers is an acrylate having a tetracyclododecane group with a carboxyl end group, which satisfies a lot of the requirements of ArF resists. A typical monomer is carboxy‐tetracyclo[4.4.0.1 2,5 .1 7,10 ]dodecyl methacrylate. In 1996, we established 0.15‐µ m “positive” line‐and‐space patterns at 21.8 mJ / cm 2 using an ArF exposure system (0.55 numerical aperture), which meet the design rule requirement for fabricating 1‐gigabit dynamic random access memories (DRAMs). This fundamental polymer unit has also been used to develop negative‐tone resists for ArF lithography. In 1999, we also established 0.13‐µ m “negative” isolated line pattern at 7.1 mJ / cm 2 using an ArF exposure system which fulfills the design rule requirement for logic circuits combined with gigabit DRAMs. Copyright © 2000 John Wiley & Sons, Ltd.