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Modelling DC characteristics of GaAs MESFETs in a wide range of temperatures
Author(s) -
Giorgio Agostino,
Perri Anna Gina
Publication year - 2001
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/1099-1204(200101/02)14:1<1::aid-jnm392>3.0.co;2-2
Subject(s) - mesfet , gallium arsenide , thermal , materials science , saturation current , cad , threshold voltage , optoelectronics , range (aeronautics) , saturation (graph theory) , voltage , electronic engineering , computer science , electrical engineering , transistor , engineering , physics , field effect transistor , mathematics , thermodynamics , engineering drawing , combinatorics , composite material
In this paper, a new semiempirical DC thermal model of low‐ and high‐power GaAs MESFETs is proposed. The model takes into account the effect of device negative output conductance and simulates external thermal effects modelling the dependence on temperature of the device threshold voltage and the maximum saturation drain–source current. A number of GaAs MESFETs, very different from a geometrical and technological point of view, have been characterized as a function of temperature and modelled by our model with high accuracy. The CPU extraction time results are moderate in any example. Results have been compared with the Rodriguez–Tellez model, showing improvements of accuracy better than 30 per cent. The model can be successfully used n MMIC CAD applications. Copyright © 2001 John Wiley & Sons, Ltd.