Premium
Perhydridosilicone films produced by IR laser‐induced chemical vapour deposition from disiloxane
Author(s) -
Pola Josef,
Bastl Zdenĕk,
Urbanová Markéta,
S̆ubrt Jan,
Beckers Helmut
Publication year - 2000
Publication title -
applied organometallic chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.53
H-Index - 71
eISSN - 1099-0739
pISSN - 0268-2605
DOI - 10.1002/1099-0739(200009)14:9<453::aid-aoc31>3.0.co;2-c
Subject(s) - chemistry , disiloxane , x ray photoelectron spectroscopy , argon , silane , scanning electron microscope , chemical vapor deposition , hydrobromic acid , infrared spectroscopy , photochemistry , sputtering , polymerization , analytical chemistry (journal) , thin film , chemical engineering , inorganic chemistry , organic chemistry , nanotechnology , polymer , optics , physics , materials science , engineering , catalysis
Solid perhydridosilicone films have been produced by transversely excited atmospheric (TEA) and continuous‐wave CO 2 laser‐induced gas‐phase decompositions of H 3 SiOSiH 3 controlled by elimination and polymerization of transient silanone H 2 SiO and affording silane and hydrogen as side products. The decomposition mechanism is supported by evidence of scavenged intermediates and minor volatile products. The films are characterized by FT infrared and x‐ray photoelectron spectroscopy and by scanning electron microscopy and shown to undergo facile oxidation of the topmost layers in air and chemical changes upon argon ion sputtering. Copyright © 2000 John Wiley & Sons, Ltd.