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Novel, gain‐flattened L ‐band EDFA with ASE utilization with >40 nm 3 dB bandwidth
Author(s) -
Mahamd Adikan F. R.,
Mahdi M. A.,
Thirumeni S.,
Poopalan P.,
Dimyati K.,
Ahmad H.
Publication year - 2001
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/1098-2760(20010320)28:6<399::aid-mop1053>3.0.co;2-s
Subject(s) - amplified spontaneous emission , optical amplifier , wavelength division multiplexing , bandwidth (computing) , optoelectronics , materials science , erbium doped fiber amplifier , net gain , optics , high gain antenna , flatness (cosmology) , multiplexing , microwave , amplifier , physics , wavelength , electronic engineering , telecommunications , engineering , cmos , laser , cosmology , quantum mechanics
A simple gain‐flattened L ‐band erbium‐doped fiber amplifier (EDFA) is demonstrated, utilizing unwanted C ‐band amplified spontaneous emission (ASE) to enhance L ‐band gain performance. An L ‐band flat gain range of 50 nm (1560–1610 nm) is achieved for use in wavelength‐division multiplexing (WDM) transmission systems. Gain flatness with a 3 dB gain discrepancy is obtained through manipulation of the pump power. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 28: 399–402, 2001.