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GaAs MMIC mixer based on the Gilbert cell with HEMTs biased on the subthreshold region
Author(s) -
ReinaTosina Javier,
Crespo Carlos,
Alonso José I.,
Pérez Félix
Publication year - 2000
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/1098-2760(20010220)28:4<241::aid-mop1006>3.0.co;2-g
Subject(s) - balun , monolithic microwave integrated circuit , subthreshold conduction , microwave , electrical engineering , optoelectronics , high electron mobility transistor , chip , engineering , materials science , transistor , bandwidth (computing) , voltage , telecommunications , cmos , amplifier , antenna (radio)
An MMIC mixer with HEMTs in a Gilbert cell configuration is proposed. Active devices are biased in the subthreshold region where current dependence on the drain‐to‐source voltage is nearly linear. Both input and output active baluns are included in the design to reduce the LO level. The chip was fabricated using GaAs HEMTs with the ED02AH process of the Philips Microwave Limeil foundry. Measurements show a good performance from 0.3 to 7 GHz, with gain in a 7 GHz bandwidth. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 28: 241–244, 2001.