Premium
Structural calibration of tensile‐strained GaAs/InAlAs quantum wells
Author(s) -
Meng Qingru,
DanielsRace Theda,
Lowe W. P.
Publication year - 2000
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/1098-2760(20010120)28:2<143::aid-mop20>3.0.co;2-0
Subject(s) - reflection high energy electron diffraction , electron diffraction , kikuchi line , materials science , scattering , diffraction , alloy , lattice constant , transmission electron microscopy , condensed matter physics , analytical chemistry (journal) , chemistry , optics , physics , metallurgy , nanotechnology , chromatography
A set of novel lattice‐mismatched quantum‐well structures is investigated. These samples are composed of tensile‐strained GaAs double quantum wells contained within relaxed In x Al 1− x As layers which are lattice mismatched with the GaAs substrate. The in‐situ calibration of the alloy composition and growth rate by reflection high‐energy electron diffraction (RHEED) is compared with ex‐situ characterization techniques which include double‐crystal X‐ray diffractometry and transmission electron microscopy (TEM). Further analysis of the sample structure is performed using Taupin–Tagaki equations based on dynamical scattering theory. Generally, the postgrowth characterization results suggest that RHEED oscillation calibration is still an effective tool for the material system used in this research to obtain information on growth rates and alloy composition. However, it is noticed that the In mole fraction determined by X‐ray diffraction has a deviation from predicted values by RHEED oscillation. This deviation was ascribed to the strain effect on the incorporation of indium atoms. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 28: 143–147, 2001.