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An analytical two‐dimensional model for an optically controlled thin‐film fully depleted surrounding/cylindrical‐gate (SGT) MOSFET
Author(s) -
Kranti Abhinav,
Haldar S.,
Gupta R. S.
Publication year - 2000
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/1098-2760(20010120)28:2<135::aid-mop18>3.0.co;2-f
Subject(s) - conductance , mosfet , threshold voltage , voltage , microwave , logarithm , saturation (graph theory) , poisson's equation , current density , flux (metallurgy) , optoelectronics , materials science , physics , optics , condensed matter physics , transistor , quantum mechanics , mathematical analysis , mathematics , combinatorics , metallurgy
An analytical model for the optical dependence of the threshold voltage, I–V characteristics, and drain conductance of a fully depleted surrounding‐gate MOSFET (SGT) is developed based on the solution of Poisson's equation under illuminated conditions. The threshold voltage shows a logarithmic variation with the incident flux density. The drain current and output conductance increase with an increase in the incident photon flux density. Further, the saturation voltage and current can be effectively controlled by optically illuminating the device. Results so obtained are in close proximity with published data. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 28: 135–141, 2001.