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Note on the S 11 ‐parameter and input impedance extraction in antenna simulations using FDTD
Author(s) -
Juntunen Jaakko S.
Publication year - 2000
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/1098-2760(20010105)28:1<8::aid-mop3>3.0.co;2-n
Subject(s) - electrical impedance , resistive touchscreen , microwave , capacitance , input impedance , finite difference time domain method , distortion (music) , output impedance , electronic engineering , voltage source , acoustics , physics , mathematics , voltage , mathematical analysis , engineering , electrical engineering , optics , telecommunications , amplifier , electrode , cmos , quantum mechanics
In a resistive voltage source (RVS) formalism, the feed impedance is known to be distorted due to the cell capacitance. In this letter, examples are given showing that the effect of the distortion may be significant. We propose a simple way to derive the S 11 ‐parameter without the uncertainty associated with the feed port impedance distortion. Furthermore, the input impedance is shown to be independent of the cell height and source model chosen. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 28: 8–11, 2001.