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Numerical investigations of optically induced Gunn oscillations in MESFET‐like structures
Author(s) -
Alsunaidi M. A.
Publication year - 2000
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/1098-2760(20010105)28:1<72::aid-mop20>3.0.co;2-a
Subject(s) - mesfet , microwave , monolithic microwave integrated circuit , gunn diode , biasing , optoelectronics , physics , time domain , optics , materials science , voltage , transistor , engineering , electrical engineering , computer science , diode , field effect transistor , quantum mechanics , amplifier , cmos , computer vision
Abstract The availability of an optically controlled integrated microwave source that is compatible with MMIC technology is highly desirable. In this paper, a time‐domain energy‐based transport model is used for the investigation of the generation of sustained Gunn domains inside a MESFET structure in response to incident light. The time‐domain investigations include the effects of optical flux density and biasing conditions on the creation and properties of the induced oscillations. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 28: 72–75, 2001.