Numerical investigations of optically induced Gunn oscillations in MESFET‐like structures | Zendy

Alsunaidi M. A. | Zendy

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Numerical investigations of optically induced Gunn oscillations in MESFET‐like structures

Author(s) -

Alsunaidi M. A.

Publication year - 2000

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/1098-2760(20010105)28:1<72::aid-mop20>3.0.co;2-a

Subject(s) - mesfet , microwave , monolithic microwave integrated circuit , gunn diode , biasing , optoelectronics , physics , time domain , optics , materials science , voltage , transistor , engineering , electrical engineering , computer science , diode , field effect transistor , quantum mechanics , amplifier , cmos , computer vision

The availability of an optically controlled integrated microwave source that is compatible with MMIC technology is highly desirable. In this paper, a time‐domain energy‐based transport model is used for the investigation of the generation of sustained Gunn domains inside a MESFET structure in response to incident light. The time‐domain investigations include the effects of optical flux density and biasing conditions on the creation and properties of the induced oscillations. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 28: 72–75, 2001.

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