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Low‐insertion‐loss hybrid p ‐ i ‐ n diode switches in Ku and Ka bands
Author(s) -
BlaisMorin LouisAntoine,
Laurin JeanJacques
Publication year - 2000
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/1098-2760(20010105)28:1<28::aid-mop8>3.0.co;2-e
Subject(s) - insertion loss , diode , pin diode , topology (electrical circuits) , microwave , transformer , electrical engineering , optoelectronics , network topology , parasitic extraction , engineering , electronic engineering , materials science , physics , computer science , telecommunications , computer network , voltage
A novel switch topology is proposed in which p ‐ i ‐ n diodes are embedded in a transformer network free of via holes. The topology is designed to achieve cancellation of diode parasitics and optimization of insertion loss. Prototypes for 15 and 29.75 GHz operation showing very good insertion loss (<0.5 dB) are presented. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 28: 28–32, 2001.