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An improved HEMT noise model for optical preamplifier design
Author(s) -
Jianjun Gao,
Baoxin Gao,
Chunguang Liang
Publication year - 2000
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/1098-2760(20010105)28:1<26::aid-mop7>3.0.co;2-n
Subject(s) - preamplifier , high electron mobility transistor , spice , electronic engineering , noise (video) , microwave , electrical engineering , engineering , gigabit , physics , computer science , amplifier , transistor , telecommunications , voltage , cmos , artificial intelligence , image (mathematics)
This paper presents an improved HEMT noise‐equivalent circuit model for a SPICE simulator. The model is employed for 2.5 Gbit/s optical preamplifier design. Simulated gain and noise performances of the preamplifier are in good agreement with measured results. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 28: 26–28, 2001.