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A quasianalytical model for LT–GaAs and LT–Al 0.3 Ga 0.7 As MISFET devices
Author(s) -
Rao Rapeta V. V. V. J.,
Chong T. C.,
Tan L. S.,
Lau W. S.,
Liou J. J.
Publication year - 2000
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/1098-2760(20001005)27:1<61::aid-mop18>3.0.co;2-u
Subject(s) - misfet , poisson's equation , microwave , poisson distribution , voltage , current (fluid) , power (physics) , electrical engineering , mathematics , physics , mathematical analysis , engineering , field effect transistor , transistor , quantum mechanics , statistics
This paper describes a quasianalytical model for the calculation of the current–voltage characteristics of LT–GaAs and LT–Al 0.3 Ga 0.7 As MISFET devices. The model is derived from basic semiconductor charge analysis. Poisson's equation, the current continuity equation, and the Chang–Fetterman velocity‐field equations have been solved analytically. When the devices are operating in the linear region and the knee region, the one‐dimensional Poisson equation is considered. When the devices are in the saturation regime, the two‐dimensional Poisson equation is solved analytically. The resulting output current–voltage characteristics are in good agreement with experimental data. This model has been used to predict the RF performance and RF power capability of these MISFETs. © 2000 John Wiley & Sons, Inc. Microwave Opt Technol Lett 27: 61–66, 2000.