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A subharmonically injection‐locked dual‐gate FET VCO frequency synthesizer
Author(s) -
Xue Quan
Publication year - 2000
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/1098-2760(20000905)26:5<294::aid-mop6>3.0.co;2-z
Subject(s) - voltage controlled oscillator , frequency synthesizer , phase noise , phase locked loop , wideband , dbc , direct digital synthesizer , pll multibit , electrical engineering , frequency offset , electronic engineering , materials science , engineering , voltage , channel (broadcasting) , orthogonal frequency division multiplexing
Abstract By employing a high‐frequency dual‐gate FET VCO and a low‐frequency PLL synthesizer, a new approach to obtain a wideband higher frequency synthesizer with a lower frequency PLL system is introduced in this letter. For a demonstration, a 4.0 GHz frequency synthesizer was designed and tested. It is a 4.0 GHz dual‐gate FET VCO that is fourth subharmonically injected locked by a 1.0 GHz PLL synthesizer, with the FET VCO being controlled by the PLL controlling voltage at the same time. Thus, the free‐running frequency of an FET VCO can follow proportionally that of the 1.0 GHz synthesizer, and wideband subharmonic injection locking can be achieved. The output power of the demonstration synthesizer is more than 15.0 dBm, with a bandwidth more than 30% and the phase noise is −102 dBc/Hz at an offset frequency of 100 kHz. © 2000 John Wiley & Sons, Inc. Microwave Opt Technol Lett 26: 294–296, 2000.