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Broadband Q Si‐based hybrid inductor for RF applications
Author(s) -
Yeo KiatSeng,
Ma JianGuo,
Do ManhAnh
Publication year - 2000
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/1098-2760(20000820)26:4<216::aid-mop3>3.0.co;2-c
Subject(s) - inductor , flatness (cosmology) , cmos , wideband , q factor , interconnection , microwave , radio frequency , electrical engineering , electronic engineering , linearity , engineering , materials science , optoelectronics , physics , telecommunications , resonator , cosmology , quantum mechanics , voltage
Abstract This letter presents a silicon inductor with a constant quality factor Q from 900 MHz to 2.5 GHz using a conventional CMOS double‐metal interconnection technology. For the first time, the linearity factor (LF) of an inductor, which indicates the “flatness” of Q over a defined range of frequencies, is introduced. The results show that the proposed design achieves a high LF as compared to the conventional spiral inductor without any area penalty. This high LF is of particular importance to wideband radio‐frequency integrated circuit (RF IC) applications because of the requirement to have consistent performance for different bands of frequency. © 2000 John Wiley & Sons, Inc. Microwave Opt Technol Lett 26: 216–219, 2000.