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Analysis of facet reflectivity of InGaAsP separate confinement heterostructure (SCH) laser diodes
Author(s) -
GhafouriShiraz H.,
Yip C. H.,
Mir Mohamad Hosseini H.
Publication year - 2000
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/1098-2760(20000805)26:3<196::aid-mop17>3.0.co;2-6
Subject(s) - facet (psychology) , diode , materials science , optoelectronics , laser , refractive index , heterojunction , optics , microwave , laser diode , reflectivity , wavelength , semiconductor laser theory , physics , psychology , social psychology , personality , quantum mechanics , big five personality traits
Variations of the cleaved facet reflectivity, mirror loss, and optical confinement factor of a separate confinement heterostructure (SCH) laser diode have been investigated. The analysis that is based on the effective refractive index method has been carried out for both fundamental TE and TM modes at a 1.55 μm wavelength. Analytical expressions are given for these parameters in terms of the refractive indexes and thicknesses of various SCH laser diode layers. © 2000 John Wiley & Sons, Inc. Microwave Opt Technol Lett 26: 196–202, 2000.