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A novel GaAs MMIC vector attenuator
Author(s) -
Tao Xu,
Xiaowei Sun,
Guanqun Xia,
Ping Zhang,
Yongjiu Zhao
Publication year - 2000
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/1098-2760(20000720)26:2<96::aid-mop8>3.0.co;2-c
Subject(s) - attenuator (electronics) , mesfet , monolithic microwave integrated circuit , resistor , optoelectronics , microwave , materials science , optical attenuator , voltage , diode , electrical engineering , engineering , transistor , electronic engineering , physics , cmos , field effect transistor , attenuation , optics , telecommunications , amplifier , fiber optic sensor , composite material , fiber
A GaAs monolithic voltage‐controlled attenuator and a vector attenuator, which apply a ring structure, are newly developed. Their features are a very small size, which permits dense integration, and a large‐scale variable range. Because of using lumped constant topologies and adopting a MESFET instead of a p‐i‐n diode as variable resistor, the size of the circuit is reduced greatly. The chip sizes of the voltage‐controlled biphase and vector attenuator are 4.5 mm×1.5 mm and 7 mm×1.5 mm, respectively. © 2000 John Wiley & Sons, Inc. Microwave Opt Technol Lett 26: 96–98, 2000.