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Microwave characterization of dielectric materials from 8 to 110 GHz using a free‐space setup
Author(s) -
Hollinger Richard D.,
Jose K. A.,
Tellakula Anilkumar,
Varadan V. V.,
Varadan V. K.
Publication year - 2000
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/1098-2760(20000720)26:2<100::aid-mop10>3.0.co;2-3
Subject(s) - microwave , characterization (materials science) , dielectric , materials science , broadband , narrowband , network analyzer (electrical) , optics , dielectric loss , optoelectronics , electronic engineering , computer science , engineering , physics , telecommunications , nanotechnology
In this paper, we present a free‐space setup for the high‐ and low‐temperature dielectric characterization of materials from 8.0 to 110 GHz along with the measured results. Using an HP 8510 XF single‐connection, single‐sweep network analyzer along with three pairs of spot‐focused horn lens antennas, it is possible to perform broadband in‐situ and real‐time dielectric characterization of materials. Presently, all other methods have the disadvantages of either being narrowband or single‐frequency measurement, and the difficulties associated with accurate sample preparation for different frequency bands. This method, based on a microwave beam focused to a measurement plane, is noncontact, so it can be adapted easily for measurements in high‐temperature and hostile environments. The frequency dependence of the complex dielectric properties of a number of common samples is measured as a function of temperature and frequency, and is compared with existing data. © 2000 John Wiley & Sons, Inc. Microwave Opt Technol Lett 26: 100–105, 2000.